2010年

   论文 

1. Hongjun Liu, Jyh-Pin Chou, Run-Wei Li, Ching-Ming Wei, and Kazushi Miki. Trimeric precursors in the formation of Al magic clusters on Si(111)-7×7 surface. Phys. Rev B.accepted,2010.

2. Xiuzhen Yu, Run-Wei Li, Toru Asaka, Kazuo Ishizuka, Koji Kimoto and  Yoshio Matsui, Relationship between magnetic domain configuration and crystallographic orientation in a colossal magnetoresistive material. Journal of Electron Microscopy. 59,S95-S100.(2010):[PDF]

3. Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*, Nonvolatile resistive switching in metal/La-doped BiFeO₃/Pt sandwiches. Nanotechnology, 21,425202(2010);[PDF]

4. Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Fei Zhuge, Bin Chen, Wei Lu,Xiaoqing Pan, and Run-Wei Li*,Resistance switching in polycrystalline BiFeO3 thin films.Appl. Phys. Lett.97,042101(2010);[PDF]

5. F. Zhuge, W. Dai, C. L. He, A. Y. Wang, Y. W. Liu, M. Li, Y. H. Wu, P. Cui, and Run-Wei Li *.　Nonvolatile resistive switching memory based on amorphous carbon. Appl. Phys. Lett. 96,163505(2010);[PDF]

6. D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, Run-Wei. Li, and Y. G. Zhao; Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing；Appl. Phys. Lett. 96,072103(2010);[PDF]

7. J. Wang, F. X. Hu, Run-Wei. Li, J. R. Sun, and B. G. Shen; Strong tensile strain induced charge/orbital ordering in (001)-La_7/8Sr_1/8MnO₃ thin film on 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃; Appl. Phys. Lett. 96,052501(2010);[PDF]

8. J. Yang, B. Li, J. Wang, L. Chen, Run-Wei.Li, A first-principles study of adhesion of Pt layers to the NiO(100) and IrO₂(110) surfaces, J. Phys: Condens. Matt. 22,015003 (2010) ;[PDF]

2009年

    论文

1. C. L. He, F. Zhuge, X. F. Zhou, M. Li, G. C. Zhou, Y. W. Liu, J. Z. Wang, B. Chen, W. J. Su, Z. P. Liu*, Y. H. Wu, P. Cui, and Run-Wei Li**, Non-volatile resistive switching in graphene oxide thin films,Appl. Phys. Lett. 95, 232101(2009);[PDF]

2. X. Z. Yu, Run-Wei Li, T. Asaka, K. Ishizuka, K. Kimoto, and Y. Matsui, Possible origins of the magnetoresistance gain in colossal magnetoresistive oxide La_0.69Ca_0.31MnO₃: Structure fluctuation and pinning effect on magnetic domain walls, Appl. Phys. Lett. 95, 092504 (2009); [PDF]

3. Run-Wei Li, H. B. Wang, X. Wang, X. Z. Yu, Y. Matsui, Z.H. Cheng, B. G. Shen, E.W. Plummer, and J. Zhang, Manganite perovskite: small lattice distortion dissimilarity triggers anomalous anisotropic magnetoresistance, Proceeding of the National Academic Sciences (PNAS), vol. 106, no. 34, 14224–14229, (2009); [PDF]

4. Run-Wei Li*; AFM lithography and fabrication of multifunctional nanostructures with perovskite oxides; International Journal of Nanotechnology, invited review, Vol. 6, No. 12, 1067-1085, (2009)；[PDF]

5. Run-Wei Li*; A. A. Belik, Z. H. Wang, and B. G. Shen, Magnetism, transport, and specific heat of electronically phase-separated Pr_0.7Pb_0.3MnO₃ single crystals, J. Phys. Conden. Mater. 21, 076002(2009); [PDF]

    专利

1. 李润伟、尹奎波、刘宜伟、李蜜、陈斌；基于铁酸铋薄膜体系的电阻式随机存储器及其制备方法；中国专利；申请号：2009100997160

2. 李润伟，诸葛飞，汪爱英，何聪丽，代伟；一种电阻型随机存储器的存储单元及其制备方法；中国专利；申请号：200910100140.5

3. 李润伟，刘兆平，诸葛飞，周旭峰，何聪丽；一种电阻型随机存储器的存储单元及其制备方法；中国专利；申请号：200910100141.x

4. 李润伟、刘宜伟、尹奎波、陈斌、李蜜；一种基于多铁性薄膜的磁记录介质及其写入方法；中国专利；申请号：200910100338.3

5. 一种高纯碳化硼粉体的制备方法；诸葛飞、李润伟；申请号：200910153736.1

6. B-C-N三元化合物及其制备方法；诸葛飞、李润伟；申请号：200910154290.4