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(a) Typical I¨CV characteristics of the Ag/La-BFO/Pt structure; the inset shows the schematic configuration of the device; (b) the endurance performance; (c) the distributions of the programming voltages (Vset and Vreset); and (d) retention for the LRS and HRS of theAg/La-BFO/Pt device at RT.

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The resistance switching behavior of the BFO film annealed at 700 ¡ãC .

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Temperature- and magnetic field- dependence of the Resistivity (Left) and AMR£¨right£©perovskite manganite La0.69Ca0.31MnO3 single crystal.

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