题 目：Nanoscale memristive devices for
memory and logic applications
报告人：卢伟 博士
时 间：8月 11日上午9：30
地 点: A515
摘 要：Memristor has been claimed as the “missing circuit element” and research on memristor devices has gained substantial interest recently after the development of a simple device model last year. Memristors or memristive systems are two-terminal electrical switches that exhibit both hysteresis (memory) and non-linear resistance characteristics. These properties allow them to act as promising candidates for ultra-high density memory and logic applications. In this talk, I will discuss our studies on a silicon-based memristive system. As a digital memory, the device is fully compatible with CMOS processing and exhibits excellent performance in terms of scaling potential, on/off ratio, yield, speed and retention/endurance. The resistance switching can be explained by the formation of a single conductive filament and can be programmed with on-current levels. Analog resistive switching has also been studied which allows the device to act as reconfigurable interconnects or “synapses” in neuromorphic circuits to emulate brain-like functionalities.
报告人简历：
卢伟博士是密歇根大学电子工程与计算机科学系助理教授，1996年于清华大学物理系获学士学位，分别于1999年和2003年在Rice大学获硕士和博士学位。此后在哈佛大学Charles Lieber教授研究组从事博士后研究。2005年进入密歇根大学电子工程与计算机科学系工作。研究兴趣包括纳米电子学、半导体纳米线以及纳米异质结的生长、基于纳米/量子尺度的新器件以及新物理、固态自旋电子器件、纳米机电系统等。卢伟博士在Nature、 Nature Mater.、 PNAS、Nano. Lett.、Adv. Mater. 等国际著名学术期刊发表20余篇论文，被引用1500多次。
欢迎感兴趣的科研人员参加！ |
